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Published Online: 27 August 2004
Accepted: July 2004

Excitonic signature in gain and carrier induced change of refractive index spectra of (In,Al)GaN quantum well lasers

Appl. Phys. Lett. 85, 1475 (2004); https://doi.org/10.1063/1.1789243
Ulrich T. Schwarza), E. Sturm, and W. Wegscheider
  • Institut für Angewandte und Experimentelle Physik, Universität Regensburg, 93040 Regensburg, Germany
    • V. Kümmler, A. Lell, and V. Härle
  • OSRAM Opto Semiconductors GmbH, Wernerwerkstrasse 2, 93049 Regensburg, Germany
    • more...View Affiliations
    ABSTRACT
    The exciton is observed in (In,Al)GaN laser diodes as resonance in the optical gain spectra and in the spectra of the carrier induced change of the refractive index. The observed instability of the exciton with respect to the free electron-hole plasma with increasing carrier densities is accompanied by a blueshift of the exciton resonance due to the quantum confined Stark shift. The experiments confirm central points of many-body simulations of InGaN∕GaN quantum wells. The exciton becomes unstable near threshold and so lasing occurs from the electron–hole plasma.
    This work was supported in part by the German Government (BMBF).

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