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Published Online: 12 November 2003
Accepted: September 2003

Optical gain, carrier-induced phase shift, and linewidth enhancement factor in InGaN quantum well lasers

Appl. Phys. Lett. 83, 4095 (2003); https://doi.org/10.1063/1.1628825
U. T. Schwarz, E. Sturm, and W. Wegscheider
  • Angewandte und Experimentelle Physik, Universität Regensburg, 93040 Regensburg, Germany
    • V. Kümmler, A. Lell, and V. Härle
  • OSRAM Opto Semiconductors GmbH, Wernerwerkstr. 2, 93049 Regensburg, Germany
    • more...
    ABSTRACT
    Adapting the Hakki Paoli method to group III nitrides, we measure gain, differential gain, carrier-induced change of refractive index, carrier-induced phase shift, and the antiguiding factor. Our measurements also cover the low-carrier-density regime, in which spontaneous and piezoelectric fields and Coulomb interaction are only partially screened. This regime is most interesting as a comparison with existing theoretical simulations, including many-body effects.

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    1. © 2003 American Institute of Physics.

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