No Access Submitted: 26 March 2003 Accepted: 03 September 2003 Published Online: 28 October 2003
Appl. Phys. Lett. 83, 3695 (2003); https://doi.org/10.1063/1.1622785
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  • Institute for Semiconductor Physics, Johannes Kepler University, A-4040 Linz, Austria
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  • Zhenyang Zhong
  • J. Stangl
  • F. Schäffler
  • G. Bauer
The surface morphology of Ge-rich islands on Si (001) substrates capped with 0 to 10 monolayers (MLs) of Si at 550 °C was investigated by atomic force microscopy. An evolution of the island shape from domes to pyramids was observed, which coincides with a dramatic decrease of the island height during overgrowth. The average lateral lattice constant 〈a of the Ge-rich islands for a series of samples was obtained from grazing incidence x-ray diffraction. 〈a decreases appreciably with deposition of the Si cap layer, even for a cap thickness as low as 1.3 MLs. At the beginning of overgrowth, Si incorporation promotes the shape evolution and the size variation of the islands.
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