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Published Online: 12 May 2003
Accepted: March 2003

Band bending independent of surface passivation in ZnO/CdS/Cu(In,Ga)(S,Se)2 heterojunctions and Cr/Cu(In,Ga)(S,Se)2 Schottky contacts

Appl. Phys. Lett. 82, 3559 (2003); https://doi.org/10.1063/1.1576500
C. Deibel, V. Dyakonov, and J. Parisi
more...View Affiliations
  • Department of Energy and Semiconductor Research, Faculty of Physics, University of Oldenburg, 26111 Oldenburg, Germany
ABSTRACT
We have employed admittance spectroscopy and deep-level transient spectroscopy in order to investigate the electronic properties of ZnO/CdS/Cu(In,Ga)(S,Se)2 heterojunctions and Cr/Cu(In,Ga)(S,Se)2 Schottky contacts. Our work concentrates on the origin of an energy-distributed defect state commonly found in these systems. The activation energy of the defect state addressed continuously shifts upon air annealing or damp-heat treatment and is a valuable measure of the degree of band bending in Cu(In,Ga)(S,Se)2-based junctions. We demonstrate that the band bending within the Cu(In,Ga)(S,Se)2 layer, reported in the literature to become minimal after air exposure, returns after the formation of either a Schottky contact or a heterojunction. The earlier phenomenon turns out to be independent of a surface passivation due to the CdS bath deposition.

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  1. © 2003 American Institute of Physics.

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