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No Access Submitted: 13 March 2000 Accepted: 19 June 2000 Published Online: 30 August 2000

  • Neutron irradiation induced degradation of the collector–emitter offset voltage in InP/InGaAs single heterojunction bipolar transistors

Journal of Applied Physics 88, 3765 (2000); https://doi.org/10.1063/1.1288778
Alexei Shatalov and S. Subramanian
  • Department of Electrical and Computer Engineering, Oregon State University, Corvallis, Oregon 97331
    • A. Dentai and S. Chadrasekhar
  • Lucent Technologies, Crawford Hill Laboratory, Holmdel, New Jersey 07733
    • S. M. Goodnick
  • Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287
    • more...View Contributors
    • Alexei Shatalov
    • S. Subramanian
    • A. Dentai
    • S. Chadrasekhar
    • S. M. Goodnick
    ABSTRACT
    In this article, we report the results of our investigation of neutron irradiation effects on the collector–emitter offset voltage of InP/InGaAs single heterojunction bipolar transistors. We find that the offset voltage of these devices increases by more than 0.1 V for neutron doses ∼6×1014 cm−2. We present an analysis of the forward and inverse Gummel plots that clearly shows that the increase in offset voltage is caused by the degradation of the base–collector junction due to the neutron-induced displacement damage in the collector.

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    1. © 2000 American Institute of Physics.

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