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No Access Submitted: 03 May 1996 Accepted: 05 November 1996 Published Online: 07 October 1998

  • Effect of indirect Γ-L and Γ-X transfer on the carrier dynamics of InGaP/InAlP multiple quantum wells

Appl. Phys. Lett. 70, 102 (1997); https://doi.org/10.1063/1.119275
C. S. Menoni, O. Buccafusca, M. C. Marconi, D. Patel, J. J. Rocca, and G. Y. Robinson
  • Optoelectronic Computing System Center and Department of Electrical Engineering, Colorado State University, Fort Collins, Colorado 80523
    • S. M. Goodnick
  • College of Engineering and Applied Sciences, Arizona State University, Tempe, Arizona 85287
    • more...View Contributors
    • C. S. Menoni
    • O. Buccafusca
    • M. C. Marconi
    • D. Patel
    • J. J. Rocca
    • G. Y. Robinson
    • S. M. Goodnick
    ABSTRACT
    Indirect Γ-L scattering within the well, and real space carrier transfer to the barrier X1c states are shown to significantly affect the carrier dynamics in In0.48Ga0.52P/In0.5Al0.5P multiple quantum wells. When carriers transfer to the indirect states occurs, the carrier dynamics is modified by the slow return of the carriers from the low mobility states to the well. As a result, the absorption recovery time increases by almost an order of magnitude. Carrier transfer to the indirect states also increases the carrier lifetime to values characteristic of indirect recombination.

    REFERENCES
    Section:
    Previous sectionNext section

    1. 1. D. P. Bour, R. S. Geels, D. W. Treat, T. L. Paoli, F. Ponce, R. L. Thornton, B. S. Krusor, R. D. Bringans, and D. F. Welch, IEEE J. Quantum Electron. 30, 593 (1994). Google ScholarCrossref, ISI
    2. 2. D. P. Bour, D. W. Treat, R. L. Thornton, T. L. Paoli, R. D. Bringans, B. S. Krusor, R. S. Geels, D. F. Welch, and T. Y. Wang, Appl. Phys. Lett. 60, 1927 (1992). Google ScholarScitation, ISI
    3. 3. C. T. H. F. Liedenbaum, A. Valster, A. L. G. J. Severens, and G. W. ’t Hooft, Appl. Phys. Lett. 57, 2698 (1990); Google ScholarScitation, ISI
      A. D. Prins, J. L. Sly, A. T. Meney, D. J. Dunstan, E. P. O’Reilly, A. R. Adams, and A. Valster, J. Phys. Chem. Solids 56, 423 (1995). , Google ScholarCrossref
    4. 4. D. Patel, M. J. Hafich, G. Y. Robinson, and C. S. Menoni, Phys. Rev. B 48, 18031 (1993). Google ScholarCrossref
    5. 5. D. Patel, K. Interholzinger, P. Thiagarajan, G. Y. Robinson, and C. S. Menoni, Phys. Rev. B 53, 12633 (1996). Google ScholarCrossref
    6. 6. M. Hawley, A. R. Adams, M. Silver, E. P. O’Reilly, and A. Valster, IEEE J. Quantum Electron. 29, 1885 (1993). Google ScholarCrossref
    7. 7. M. J. Hafich, H. Y. Lee, G. Y. Robinson, D. Li, and N. Otsuka, J. Appl. Phys. 69, 752 (1991). Google ScholarScitation, ISI
    8. 8. P. Thiagarajan, J. F. Schmerge, C. S. Menoni, M. C. Marconi, O. E. Martinez, J. J. Rocca, M. J. Hafich, H. Y. Lee, and G. Y. Robinson, Appl. Phys. Lett. 59, 90 (1990). Google ScholarScitation
    9. 9. For a pump beam intensity of 8 mW, 3×1011 carriers/cm−3 were generated. A 5:1 pump/probe ratio was used. Google Scholar
    10. 10. P. C. Becker, H. L. Fragnito, C. H. Brito Cruz, J. Shah, R. L. Fork, J. E. Cunningham, J. E. Henry, and C. V. Shank, Appl. Phys. Lett. 53, 2089 (1988). Google ScholarScitation, ISI
    11. 11. J. Feldmann, J. Nunnenkamp, G. Peter, E. Göbel, J. Kuhl, K. Ploog, P. Dawson, and C. T. Foxon, Phys. Rev. B 42, 5809 (1990). Google ScholarCrossref
    12. 12. S. M. Goodnickand P. Lugli, Phys. Rev. B 37, 2578 (1988). Google ScholarCrossref, ISI
    13. 13. Values of the intervalley deformation potential=6×108 eV/cm, L−effective mass=0.55m0, X−effective mass=0.85m0, with m0 being the free electron mass, were used. Intervalley deformation potential, identified in Reference 11 as the dominant scattering process in wide GaAs/AlAs MQWs at low temperature also plays a dominant role at room temperature, as carrier-phonon effects are enhanced. Google Scholar
    14. 14. T. Andoand H. Akera, Phys. Rev. B 40, 11 619 (1989); Google Scholar
      T. Andoand H. Akera, Phys. Rev. B 40, 11 609 (1989). Google Scholar
    15. 15. C. J. Stantonand D. W. Bailey, Phys. Rev. B 45, 8369 (1992). Google ScholarCrossref
    16. 16. τPL decreased from 300 ps at 10 K to 80 ps at 300 K and at each temperature it did not change when the excitation density was varied by a factor of 2. Google Scholar
    17. 17. M. A. Gell, D. Ninno, M. Jaros, D. J. Woldford, T. F. Keuch, and J. A. Bradley, Phys. Rev. B 35, 1196 (1987). Google ScholarCrossref, ISI
    18. 18. P. Dawson, K. J. Moore, C. T. Foxon, G. W. ’t Hooft, and R. P. M. van Hal, J. Appl. Phys. 65, 3606 (1989). Google ScholarScitation, ISI
    19. 19. The nonradiative lifetime is constant in a pressure range of 0.4 GPa around Pc, when the Γ1e-X1cb separation is less than ∼20 meV and mixing is important. Google Scholar
    20. 20. We used a value of B=4.4×10−17 cm2 eV ps−1 determined for our samples in J. L. A. Chilla, O. Bucafusca, and J. J. Rocca, Phys. Rev. B 48, 14347 (1993). Google ScholarCrossref
    1. © 1997 American Institute of Physics.

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