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No Access Submitted: 13 April 1992 Accepted: 04 August 1992 Published Online: 04 June 1998

  • Lateral p‐n junctions and quantum wires formed by quasi two‐dimensional electron and hole systems at corrugated GaAs/AlGaAs interfaces

Appl. Phys. Lett. 61, 1823 (1992); https://doi.org/10.1063/1.108386
Wolfgang Porod and Henry K. Harbury
  • Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556
    • Stephen M. Goodnick
  • Department of Electrical and Computer Engineering, Oregon State University, Corvallis, Oregon 97331
    • more...View Contributors
    • Wolfgang Porod
    • Henry K. Harbury
    • Stephen M. Goodnick
    ABSTRACT
    We report the results of modeling lateral p‐n junctions and p‐n‐p quantum wire structures at corrugated GaAs/AlGaAs interfaces, using the surface orientation dependent amphoteric nature of Si doping. We determine the potential landscape and the electron and hole charge densities within a semiclassical Thomas–Fermi screening model, and then solve the two‐dimensional Schrödinger equation using finite elements for the quantized electron and hole states at the heterointerfaces. We demonstrate the formation of a one‐dimensional electron system confined between two lateral p‐n junctions, and discuss the advantages of this structure compared to conventional electrostatic confinement schemes for fabricating quantum wires.

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    1. © 1992 American Institute of Physics.

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