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No Access Submitted: 21 January 1991 Accepted: 05 April 1991 Published Online: 04 June 1998

  • Interference phenomena due to a double bend in a quantum wire

Appl. Phys. Lett. 59, 102 (1991); https://doi.org/10.1063/1.105558
J. C. Wu and M. N. Wybourne
  • Physics Department, University of Oregon, Eugene, Oregon 97403
    • W. Yindeepol, A. Weisshaar, and S. M. Goodnick
  • Department of Electrical and Computer Engineering, Oregon State University, Corvallis, Oregon 97331
    • more...View Contributors
    • J. C. Wu
    • M. N. Wybourne
    • W. Yindeepol
    • A. Weisshaar
    • S. M. Goodnick
    ABSTRACT
    Narrow channel devices were fabricated using a split‐gate high electron mobility transistor structure in which electrons are forced through a double‐bend discontinuity. The low‐temperature conductance shows a number of peaks in the lowest quantized conductance plateau which correspond qualitatively to resonance effects that are predicted for the geometrical discontinuities of the double bend.

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    1. © 1991 American Institute of Physics.

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