Abstract
Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure (DH) blue‐light‐emitting diodes (LEDs) with the luminous intensity over 1 cd were fabricated. As an active layer, a Zn‐doped InGaN layer was used for the DH LEDs. The typical output power was 1500 μW and the external quantum efficiency was as high as 2.7% at a forward current of 20 mA at room temperature. The peak wavelength and the full width at half‐maximum of the electroluminescence were 450 and 70 nm, respectively. This value of luminous intensity was the highest ever reported for blue LEDs.
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